
NXP Semiconductors
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per device
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 65
? 65
150
+150
+150
° C
° C
° C
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge
IEC 61000-4-2
[1][2]
-
10
kV
voltage
(contact discharge)
MIL-STD-883 (human
-
8
kV
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
001aaa631
I PP
100 %
90 %
10 %
PESD5V0U2BT_1
t r = 0.7 ns to 1 ns
30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
t
? NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 March 2007
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